The European Ceramic Society

YCN representative - Poland

Dawid Kozień

YCN representative from the Polish Ceramic Society

Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

kozien@agh.edu.pl

         

Doctor Dawid Kozień is a reseracher in the Faculty of Materials Science and Ceramics, AGH University of Science and Technology.

His research are focused on generation of new agents of boron delivery for Boron Neutron Capture Therapy (BNCT). This therapy utilizes the neutron capture reaction of the nuclei of non-radioactive boron, 10B, which results in the unstable nucleus 11B that decays into the α particle (Helium-4) and a recoiled lithium nucleus, 7Li. Therapy depends on the "introduction" of boron compounds into tumor cells and then irradiating them with low energy epithermal neutrons. The present research has confirmed the possibility of using boron carbide as a potential new boron source in BNCT, which is not cytotoxic and will be able to deliver more 10B isotope to cancer cells comparing with previous utylizing compounds. Currently, he works on functionalisation of boron carbide surface in order to increase the efficiency of penetration of boron compounds into cancer cells. As result of performed, 2 patent applications were obtained. Boron rich carbide (B13C2) powder in the form of uniform and very pure nanoparticles obtained by the means of method elaborated by Dawid could be used not only in bioengineering but in other ceramic aplication also.

Paralelly, Dawid Kozień works on synthesis the new ultra-high temperature ceramic (UHTC) materials utylizing reactive sintering of mixtures containing different boron carbide form. UHTC composites are a class of materials with a low density and a high melting point, close to 3000°C or higher, which can be used for a long time at temperatures above 1650°C, maintaining high hardness, stiffness and chemical resistance. He elaborated method of manufacturing  a fully dense composites composed of TiB2, TiC, SiC at temperatures lower than 1400°C.

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